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| 2SK4042 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK4042 Switching Regulator Applications * * * * Low drain-source ON resistance: RDS (ON) = 0.7 (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 30 8 32 40 312 8 4 150 -55~150 A W mJ A mJ C C Unit V V V Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range 1: Gate 2: Drain 3: Source JEDEC JEITA TOSHIBA SC-67 2-10U1B Weight : 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/''Derating Concept and Methods'') and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics 2 Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 3.125 62.5 Unit C/W C/W Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 90 V, Tch = 25C(initial), L = 8.3 mH, IAR = 8 A, RG = 25 Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 3 1 2007-10-01 2SK4042 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge tf toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 8 A - Duty < 1%, tw = 10 s = Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton 10 V VGS 0V 50 ID = 4 A VOUT VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 500 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 4 A VDS = 10 V, ID = 4 A Min 30 500 2.0 3.0 Typ. 0.70 6.5 1050 10 110 26 45 38 130 28 16 12 Max 10 100 4.0 0.97 pF Unit A V A V V S ns RL = 50 VDD 200 V - nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 8 A, VGS = 0 V IDR = 8 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 190 0.5 Max 8 32 -1.7 Unit A A V ns C Marking K4042 Part No. (or abbreviation code) Lot No. A line indicates Lead (Pb)-Free Finish 2 2007-10-01 2SK4042 ID - VDS 10 COMMON SOURCE Tc = 25C PULSE TEST 15 20 8 7 COMMON SOURCE Tc = 25C PULSE TEST ID - VDS 15 8 7.5 (A) 8 (A) DRAIN CURRENT ID 16 DRAIN CURRENT ID 6 6.5 12 7 4 6 8 6.5 6 5.5 2 5.5 VGS = 5V 4 0 0 2 4 6 8 10 0 0 10 20 30 40 V (V) 50 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS ID - VGS COMMON SOURCE VDS = 20V PULSE TEST VDS - VGS VDS (V) 10 COMMON SOURCE Tc = 25C PULSE TEST 25 (A) 20 Tc = -55C 8 DRAIN CURRENT ID DRAIN-SOURCE VOLTAGE 25 15 100 10 ID = 8A 6 4 4 2 5 2 0 0 2 4 6 8 10 12 0 0 5 10 15 20 GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VGS (V) RDS (ON) - ID FORWARD TRANSFER ADMITTANCE Yfs (S) Yfs - ID 100 COMMON SOURCE VDS = 20 V PULSE TEST DRAIN-SOURCE ON RESISTANCE RDS (ON) () 10 COMMON SOURCE Tc = 25C PULSE TEST 10 Tc = -55C 25 100 1 VGS = 10 ,15V 1 0.1 0.1 1 10 100 0.1 0.1 1 10 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 3 2007-10-01 2SK4042 2 RDS(ON) - TC DRAIN REVERSE CURRENT IDR (A) COMMON SOURCE VGS = 10 V PULSE TEST ID = 8A 4 2 IDR - VDS 100 COMMON SOURCE Tc = 25C PULSE TEST DRAIN-SOURCE ON RESISTANCE RDS (ON) ( ) 1.6 10 1.2 0.8 1 10 5 3 1 -0.2 -0.4 -0.6 VGS = 0, -1 V -0.8 -1.0 -1.2 0.4 0 -80 -40 0 40 80 120 160 0.1 0 CASE TEMPERATURE Tc (C) DRAIN-SOURCE VOLTAGE VDS (V) CAPACITANCE - VDS 10000 5 Vth - Tc (pF) 1000 Ciss GATE THRESHOLD VOLTAGE Vth (V) 4 C CAPACITANCE Coss 100 3 2 10 COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25C 1 10 Crss 1 COMMON SOURCE VDS = 10 V ID = 1 mA PULSE TEST -40 0 40 80 120 160 1 0.1 100 0 -80 DRAIN-SOURCE VOLTAGE VDS (V) CASE TEMPERATURE Tc (C) PD - Tc VDS (V) 50 500 DYNAMIC INPUT / OUTPUT CHARACTERISTICS 20 DRAIN POWER DISSIPATION PD (W) 40 400 VDS VDD = 100 V 16 DRAIN-SOURCE VOLTAGE 30 300 200 200 VGS 100 400 12 20 8 10 COMMON SOURCE ID = 8 A Tc = 25C PULSE TEST 30 40 4 0 0 40 80 120 160 0 0 10 20 0 50 CASE TEMPERATURE Tc (C) TOTAL GATE CHARGE Qg (nC) 4 2007-10-01 GATE-SOURCE VOLTAGE VGS(V) 2SK4042 rth - tw NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) 10 1 Duty=0.5 0.2 0.1 0.1 0.05 0.02 PDM t 0.01 0.01 SINGLE PULSE T Duty = t/T Rth (ch-c) = 3.125C/W 0.001 10 100 1m 10m 100m 1 10 PULSE WIDTH tw (s) SAFE OPERATING AREA 100 ID max (PULSED) * 500 EAS - Tch (A) 10 ID max (CONTINUOUS) * 1 ms * AVALANCHE ENERGY EAS (mJ) 100 s * 400 300 DRAIN CURRENT ID 200 1 DC OPERATION Tc = 25C 100 SINGLE NONREPETITIVE PULSE 0.1 CURVES LINEARLY Tc=25 MUST WITH BE DERATED IN 0 25 50 75 100 125 150 INCREASE TEMPERATURE. CHANNEL TEMPERATURE (INITIAL) Tch (C) VDSS max 100 1000 0.01 1 10 DRAIN-SOURCE VOLTAGE VDS (V) 15 V -15 V BVDSS IAR VDD VDS TEST CIRCUIT RG = 25 VDD = 90 V, L = 8.3mH WAVE FORM AS = 1 B VDSS L I2 B - VDD 2 VDSS 5 2007-10-01 2SK4042 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN GENERAL * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-10-01 |
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